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在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上,采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片,研究了探测器光电性能.结果表明,室温下单元器件响应截止波长和峰值波长分别为2.36μm和1.92μm,平均优值因子(R0A)为16.0Ω.cm2,峰值量子效率达到了37.5%;在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W,响应非均匀性为8.77%,盲元率约为0.6%.
On the N-on-P type In0.78Al0.22As / In0.78Ga0.22As epitaxial material, a backlit 640 × 1 InGaAs detector chip was prepared by inductively coupled plasma (ICP) etching. The results show that the cut-off wavelength and the peak wavelength of the device at room temperature are 2.36μm and 1.92μm, the average merit (R0A) is 16.0Ω.cm2 and the peak quantum efficiency reaches 37.5% Under the time, the average peak detection rate of the focal plane detector reached 2.01 × 1011 cmHz1 / 2 / W, the response nonuniformity was 8.77% and the blind element rate was about 0.6%.