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采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜。用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响。采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应。实验结果表明:较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶。在2V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3s,稳定光电流可达到2.1mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料。
Using DC reactive magnetron sputtering method, high purity titanium target sputtered TiO2 thin films on ITO quartz substrate. The structure, surface morphology and UV-Vis transmission spectra of TiO2 thin films were tested by XRD, Raman spectroscopy, AFM and UV-visible spectrophotometer. The effect of sputtering pressure, oxygen-argon ratio and annealing temperature on the structure of thin films Impact. The UV light response of anatase TiO2 thin films was investigated by C (glue) / TiO2 / ITO three-layer structure. The experimental results show that the lower sputtering pressure, the proper ratio of oxygen to argon and the higher annealing temperature are favorable for the crystallization of anatase TiO2 thin films. Under the bias of 2V, the UV response of anatase TiO2 film is about 3s and the steady photocurrent can reach 2.1mA. The sensitivity to UV light and the stable photoresponse indicate that TiO2 film may become a New UV detector material.