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随着超大规模集成电路特征尺寸不断缩小,多层Cu互连之间的RC延迟成为一个越来越严重的问题。由于低介电常数(low-k)材料配合空气隙(air gap)结构可用于降低Cu互连导线间的耦合电容从而改善RC延迟特性,建立了单层和多层空气隙Cu互连结构的有限元分析模型,以研究空气隙结构尺寸与互连介质等效介电常数的关系。结果表明,在单层空气隙Cu互连结构中,通过增加互连导线间空气隙的结构尺寸可以减小Cu互连结构中的耦合电容,进而改善RC延迟特性;在多层空气隙Cu互连结构中,通过改变IMD和ILD中空气隙的尺寸结构可以得到RC延迟性能优化的多层空气隙Cu互连结构。
As the feature sizes of very large scale integrated circuits continue to shrink, the RC delay between multilayer Cu interconnects becomes a more and more serious problem. Since the low-k material with air gap structure can be used to reduce the coupling capacitance between the Cu interconnect wires to improve the RC delay characteristics, single-layer and multi-layer air gap Cu interconnect structures Finite element analysis model to study the relationship between the size of the air gap structure and the equivalent dielectric constant of the interconnection medium. The results show that the coupling capacitance in the Cu interconnection structure can be reduced and the RC delay characteristic can be reduced by increasing the size of the air gap between the interconnecting wires in the single-layer air-gap Cu interconnection structure. In the structure, multi-layer air gap Cu interconnect structure with optimized RC delay performance can be obtained by changing the size structure of air gap in IMD and ILD.