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一、引言随着器件工艺的不断发展,对离子注入机提出了更高的要求,70年代初的离子注入机只能获得几十微安的束流,称为弱流离子注入机。近年来,广泛采用的是中束流离子注入机,束流可达几百微安,能量一般在200kev以下。同时束流达毫安级的大束流离子注入机,能量在100kev以下,也得到迅速的发展。随着束流的提高,注入剂量的增大,离子注入机的辐射剂量也随之增大。测量结果表明,离子注入机的辐射线主要是X—γ射线,为了减少辐射线对工作人员的危害,并为设计离子注入机提供一些参数,我们对我所生产的LC_2和LC_3型离子注入机,以及国内现有部分离子注入机的辐射剂量进行了较全面的调查和测量.本文简要介绍我们的调查和测量结果。
I. INTRODUCTION With the continuous development of device technology, higher requirements for ion implanter have been put forward. Ion implanter in the early 1970s can only get dozens of microampere beam current, called weak ion implanter. In recent years, widely used in the beam ion implanter, beam up to hundreds of microamps, the energy is generally below 200kev. At the same time beam beam reaches milliampere level beam ion implanter, the energy below 100kev, has also been rapid development. With the increase of the beam current, the injection dose increases, and the radiation dose of the ion implanter increases. The measurement results show that the radiation of the ion implanter is mainly X-γ-ray. In order to reduce the harm of radiation to the staff and provide some parameters for the design of the ion implanter, we have analyzed the LC_2 and LC_3 ion implanters , As well as the radiation dose of some existing ion implanters in our country .This article briefly introduces our survey and measurement results.