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研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响.实验结果表明:在快速热处理工艺下,间隙铜对氧沉淀几乎没有影响,铜沉淀却能显著地促进氧沉淀的形成;而间隙镍或镍沉淀对氧沉淀的形成都没有影响.基于实验结果并结合氧沉淀的形核理论,对金属铜、镍对氧沉淀的影响机理进行了解释.
The effects of copper and nickel transition metals on the formation of oxygen precipitates in Czochralski (CZT) single crystal silicon were studied under rapid thermal treatment.The experimental results show that under the rapid heat treatment process, interstitial copper has little effect on oxygen precipitation, Copper deposition can significantly promote the formation of oxygen precipitation, while interstitial nickel or nickel precipitation has no effect on the formation of oxygen precipitation.Based on the experimental results and the nucleation theory of oxygen precipitation, the influence mechanism of copper and nickel on oxygen precipitation Explained.