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本实验对记忆保持（ｒｅｔｅｎｔｉｏｎ）良好组和低劣组小鼠海马ＣＡ３区ＧｒａｙⅠ型突触界面结构进行了定量观察分析。结果表明：记忆保持良好组海马ＣＡ３区突触后膜致密物质（ｐｏｓｔ—ｓｙｎａｐｔｉｃｄｅｎｓｉｔｙ，ＰＳＤ）极显著地密于记忆保持低劣组（Ｐ＜０．０１）。同时，记忆良好组出现了穿孔性突触（ｐｅｒｆｏｒａｔｅｄｓｙｎａｐｓｅ），而记忆低劣组没有出现。此外，还测量了突触界面曲率、突触活性区长度和突触间隙宽度，并统计了突触界面弯曲类型（正向弯曲型、负向弯曲型和平直型）的百分比，所得数据在两组间均无显著性差异。结果提示：突触后膜致密物质厚度与记忆保持的程度密切相关，而且ＰＳＤ增大与出现穿孔性突触相平行。
In this study, the gray Ⅰ-type synaptic interface structure in hippocampal CA3 region of mice with good retention of memory group and low-quality group was quantitatively observed and analyzed. The results showed that post-synaptic density (PSD) of hippocampal CA3 region was significantly significantly lower than that of memory-poor group (P <0.01). At the same time, perforated synapses appeared in the well-memory group, whereas no memory-poor group appeared. In addition, the curvature of the synaptic interface, the length of the synaptic active region and the width of the synaptic cleft were measured, and the percentage of the curved type of the synaptic interface (positive bending type, negative bending type and straight type) was also calculated. There was no significant difference between groups. The results suggest that the thickness of the postsynaptic membrane dense material is closely related to the degree of memory retention, and the increase of PSD is parallel to the presence of perforation synapses.