论文部分内容阅读
美国麻省理工学院(MIT)的研究人员日前发表的一项研究成果显示,电子束“光刻”精度可以小到9纳米的范围,刷新了以前一项精度为25纳米的结果,这一进展有可能为电子束“光刻”和EUV(超紫外)光刻技术展开竞争提供了动力。
A recent study by Massachusetts Institute of Technology (MIT) researchers showed that the electron beam “lithography” can be as small as 9 nanometers, refreshing the previous one with a resolution of 25 nanometers, which One advance has the potential to compete for electron beam lithography and EUV lithography.