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运用气相输运技术在不同的衬底上制备ZnO薄膜,同时对这些ZnO薄膜的表面形貌、晶体结构和光学特性进行表征。在扫描电子显微镜图像上可以看到,相比没有镀金的Si衬底,ZnO纳米颗粒在镀金的Si衬底上的生长尺寸较大。X射线衍射测试结果表明,在Si(111)和Si(100)衬底上生长的ZnO薄膜显示出不同的六角纤锌矿结构的衍射峰,但没有出现立方闪锌矿ZnO结构的衍射峰。在镀金的Si衬底上,ZnO薄膜生长取向主要为c轴方向。此外,所有ZnO样品的光致发光谱上均只出现一个狭窄且强的紫外峰,约在389 nm(3.19 eV)波长处。
ZnO thin films were prepared on different substrates by vapor transport technique, and the surface morphology, crystal structure and optical properties of these films were characterized. It can be seen on the scanning electron microscope image that the growth size of the ZnO nano-particles on the gold-plated Si substrate is larger than that of the non-gold-plated Si substrate. The results of XRD show that ZnO films grown on Si (111) and Si (100) substrates show different diffraction peaks of hexagonal wurtzite structure but no diffraction peaks of ZnO structure of the clinmallite. On the gold-plated Si substrate, the growth orientation of ZnO film is mainly c-axis direction. In addition, only a narrow and strong UV peak appears in the photoluminescence spectrum of all ZnO samples, which is about 389 nm (3.19 eV).