本文介绍了用作器件的半导体硅片表面和本体中Na,Cu,Au含量的堆中子活化分析方法。给出了探测极限。除了常用的“相对比较法”外,着重介绍了“代用标准法”。为了适应常规分析的要求,我们以铁丝作Cu和Na的代用标准,使照后的标准处理摆脱了放射性溶液操作。 This paper presents a method for the analysis of heap neutron activation for the contents of Na, Cu and Au on the surface of semiconductor wafers and on the bulk of the device. The detection limit is given. In addition to the commonly used “relative comparative law”, focuses on the “Alternative Standard Law.” In order to meet the requirements of routine analysis, we use iron wire as the substitute standard of Cu and Na, so that the standard treatment after irradiation is free from the operation of radioactive solution.