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Two types of GaAs/AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry|wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue|shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high|energy ion etching and improve the optical characteristics of the quantum dot arrays.
Two types of GaAs / AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry | wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue | shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high energy ion etching and improve the optical characteristics of the quantum dot arrays.