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研究了VDMOS器件存在异常峰值电流的原因,提出了解释此现象的理论。异常峰值电流的大小由VDMOS元胞在P+body区之间neck区的界面状态决定。一般MOSFET不具有此特殊结构,因而不具有此异常峰值电流现象。为了验证上述理论,采用TCAD(ISE),模拟了氧化物陷阱电荷和界面态电荷对异常峰值电流的影响程度。研究结果表明,氧化物陷阱电荷和界面态电荷显著影响neck区域的复合电流,是产生异常峰值电流最主要的原因。
The reason of abnormal peak current in VDMOS device is studied, and a theory to explain this phenomenon is proposed. The magnitude of the anomalous peak current is determined by the state of the interface of the VDMOS cells in the region of the neck between the P + body regions. General MOSFET does not have this special structure and therefore does not have this anomalous peak current phenomenon. In order to verify the above theory, TCAD (ISE) was used to simulate the effect of oxide trap charge and interfacial charge on the anomalous peak current. The results show that the oxide trap charge and interfacial charge significantly affect the compound current in the neck region, which is the most important cause of abnormal peak current.