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以多孔阳极氧化铝膜(porous anodic alumina,PAA)为基片,采用真空电子束蒸发的方法在多孔氧化铝膜上制备了高度有序度的Sn纳米点阵列.锡纳米点阵的XRD与块体锡的完全相同,扫描电镜(SEM)测试结果表明,所制备的金属Sn纳米点阵与阳极氧化铝膜的多孔阵列具有完全相同的有序结构,阵列中每个Sn纳米粒子的形状为球形的,其直径接近于PAA膜的孔直径.对Sn纳米点阵形成过程和形成机理进行了讨论.
Porous anodic alumina (PAA) as a substrate, a method of vacuum electron beam evaporation was prepared on the porous alumina film highly ordered Sn nanodots array. X-ray diffraction of tin nanocrystals with the block The results of scanning electron microscopy (SEM) showed that the fabricated Sn-SnD arrays had the same ordered structure as that of the porous anodic alumina films. The shape of each Sn nanoparticle in the array was spherical , The diameter of which is close to the pore diameter of PAA membrane.The formation process and formation mechanism of Sn nanodots are discussed.