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为了优化光栅性能,提出一种基于互补金属氧化物半导体兼容性制造工艺的非对称包层调制光栅结构。该结构通过调整光栅齿的位置来改变波导中传输光的耦合率,最终达到改善光栅的反射带宽、消光比、输出功率等性能参数的目的。利用耦合模理论分析了该改进型光栅结构对光栅耦合率、反射带宽及输出性能的影响,同时利用有限元方法进行了数值仿真。结果表明,该改进型光栅的反射带宽由0.9nm减小到0.3nm,消光比的绝对值从29.2dB增加到35.1dB,耗散到包层的光功率从5.99×10~(-5) W减小到3.13×10~(-5) W;该改进型光栅器件性能得到改善。
In order to optimize the performance of the grating, an asymmetric cladding grating structure based on complementary metal oxide semiconductor (CMOS) manufacturing process is proposed. The structure changes the coupling ratio of the transmitted light in the waveguide by adjusting the position of the grating tooth, and finally achieves the purpose of improving the reflection bandwidth, extinction ratio, output power and other performance parameters of the grating. The influence of the improved grating structure on the grating coupling ratio, the reflection bandwidth and the output performance is analyzed by using the coupled mode theory. At the same time, the numerical simulation is carried out by the finite element method. The results show that the reflection bandwidth of the improved grating decreases from 0.9nm to 0.3nm, the absolute value of extinction ratio increases from 29.2dB to 35.1dB, and the optical power dissipated into the cladding decreases from 5.99 × 10 ~ (-5) W Reduced to 3.13 × 10 ~ (-5) W; the improved grating device performance is improved.