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用La B6灯丝200 kV高分辨透射电镜拍摄了有小角晶界的3C-Si C/(001)Si薄膜的[1ˉ10]高分辨电子显微像.用像解卷技术把本不直接反映晶体结构的实验像转化为结构像.首先,从完整区的结构像中分辨开间距仅为0.109 nm的Si和C原子柱;随后按赝弱相位物体近似像衬理论,分析像衬随晶体厚度的变化规律,辨认出Si和C原子;进而在原子水平上得出小角晶界附近两个复合位错的核心结构,构建了结构模型并计算了模拟像.实验像与模拟像的一致程度验证了结构模型的正确性.于是,在已知完整晶体结构的前提下,仅从一帧实验高分辨像出发,推演出原子的种类和位错核心的原子组态.还讨论了3C-SiC小角晶界的形成与晶界附近出现复合位错的关系.
High-resolution electron micrographs of 3C-Si C / (001) Si films with small angle boundaries were photographed using La B6 filament 200 kV high-resolution transmission electron microscopy using the uncooled technique such as uncoil to directly reflect the crystal structure First of all, the resolution of the Si and C atomic pillars with a pitch of 0.109 nm is determined from the structural image of the complete region; then the change of the film thickness as a function of crystal thickness is approximated by the approximation of the liner theory of the pseudo-weak phase object We can get the core structure of two complex dislocations near the small-angle grain boundaries at the atomic level, construct the structural model and calculate the simulated images.The consistent degree between the experimental images and the simulated images verifies the structure The correctness of the model.Thus, under the premise of knowing the complete crystal structure, the type of atoms and the atomic configuration of the dislocation core are deduced from only one frame of experimental high-resolution images.At the same time, And the formation of composite dislocations near grain boundaries.