分析了传统晶闸管结终端造型技术的优缺点。基于双负角结终端造型技术,通过径向变掺杂技术和类台面造型技术改进,发展了一种全新的结终端造型技术。该技术不仅使芯片极薄化,而且使结终端造型占用芯片长度极小化,同时使有效导通长度极大化。制造并测试了三种不同结终端造型技术的样品,测试结果表明,采用该技术的样品在不降低阻断电压(≥8 000 V)前提下,具有更小的漏电流(2.50 m A);在流过相同的通态电流(4 500 A)时,具有更小的通态压降1.782 V;而且反向恢复电荷、dv/dt耐量、di/dt耐量、关断时间等得到全面优化。成功研制了6英寸(1英寸=2.54 cm)电流为4 500 A、阻断电压为8 500 V的特高压晶闸管,其动态特性和参数的一致性满足设计及应用要求。 The advantages and disadvantages of the traditional thyristor terminal modeling technology are analyzed. Based on the dual negative angle junction terminal modeling technology, a new type of junction termination modeling technology has been developed through radial variable doping technology and mesa-like modeling technology. The technology not only makes the chip very thin, but also makes the end of the terminal footprint minimized chip length, while maximizing the effective conduction length. Three different end-junction modeling techniques were fabricated and tested. The results show that the samples with this technique have smaller leakage current (2.50 m A) without decreasing the blocking voltage (≥8 000 V) With the same on-state current (4 500 A), it has a smaller on-state voltage drop of 1.782 V; and reverse recovery charge, dv / dt tolerance, di / dt tolerance, turn-off time and other fully optimized. A 6-inch (1 inch = 2.54 cm) high-voltage thyristor with a current of 4 500 A and a blocking voltage of 8 500 V was successfully developed to meet the design and application requirements for its dynamic characteristics and parameters.