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采用深紫外光致发光技术测量AlxGa1-xN半导体异质外延膜的禁带宽度,结合Material Studio软件中的CASTEP模块模拟计算AlxGa1-xN异质外延膜材料的弯曲因子,测定了AlxGa1-xN外延膜样品中的Al元素物质的量分数。结果表明,发射波长为224.3nm的HeAg激光器能够激发AlxGa1-xN半导体材料产生发光现象。CASTEP软件模拟计算得到AlxGa1-xN的弯曲因子为1.01462±0.06772eV,认为其弯曲因子在1.0eV附近,由此可以理论计算得到具有Al组分梯度的一系列AlxGa1-xN外延膜样品中的Al元素物质的量分数。
The bandgap of AlxGa1-xN semiconductor heteroepitaxial film was measured by deep ultraviolet photoluminescence (PLD) technique. The bending factor of AlxGa1-xN heterostructure epitaxial film was calculated by CASTEP module in Material Studio software. The AlxGa1-xN epitaxial film The amount of Al elemental material in the sample. The results show that the HeAg laser emitting at 224.3nm can excite the AlxGa1-xN semiconductor material to emit light. The bending factor of AlxGa1-xN was calculated by CASTEP software to be 1.01462 ± 0.06772eV and the bending factor was assumed to be around 1.0eV. Al elements in a series of AlxGa1-xN epitaxial films with Al composition gradient can be theoretically calculated The amount of material.