论文部分内容阅读
采用LP-MOCVD在蓝宝石基片上外延生长了Mg掺杂p-GaN,并对样品进行了退火处理。利用高分辨X射线衍射(HRXRD)对经不同退火时间处理后的样品进行了测试分析,从应变的角度对p型GaN中的杂质和缺陷行为特性进行了分析和探讨。结果表明:p型GaN的应变状态与其退火过程中的杂质和缺陷行为及其最后的电学性能都有着一定的规律性。
The Mg-doped p-GaN was epitaxially grown on the sapphire substrate by LP-MOCVD, and the samples were annealed. The samples treated by different annealing times were analyzed by HRXRD, and the impurity and defect behavior of p-type GaN were analyzed and discussed from the perspective of strain. The results show that the strain state of p-type GaN has some regularity with the behavior of impurities and defects during annealing and its final electrical properties.