HRXRD相关论文
采用LP-MOCVD在蓝宝石基片上外延生长了Mg掺杂p-GaN,并对样品进行了退火处理。利用高分辨X射线衍射(HRXRD)对经不同退火时间处理后......
A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO fil......
A high-quality GaN film was (W-GaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor depositio......
Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN ......
