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提出用p-InGaN/AlGaN超晶格作为p-GaN的接触层来获得低阻欧姆接触。通过一维薛定谔方程和泊松方程的自洽求解,得到了在极化效应影响下的InGaN/AlGaN,InGaN/GaN和GaN/AlGaN三种超晶格中Mg杂质离化率的空间分布。计算发现InGaN/AlGaN超晶格具有最高的Mg杂质离化率及最佳的空穴局域作用。最后,利用p-InGaN/AlGaN超晶格实验上实现了比接触电阻率为7.27×10-5Ω.cm2的良好欧姆接触。
A p-InGaN / AlGaN superlattice is proposed as a contact layer of p-GaN to obtain a low-resistance ohmic contact. Through the one-dimensional self-consistent solution of one-dimensional Schrödinger equation and the Poisson equation, the spatial distribution of Mg impurity ionization rates in three superlattices of InGaN / AlGaN, InGaN / GaN and GaN / AlGaN under the influence of polarization is obtained. The InGaN / AlGaN superlattice has been found to have the highest Mg impurity ionization rate and the best hole local effect. Finally, a good ohmic contact was achieved experimentally with p-InGaN / AlGaN superlattices over a contact resistivity of 7.27 × 10 -5 Ω · cm 2.