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一、引言与 InP(In_(0.53)Ga_(0.47)As)晶格相匹配的 InGaAs,在光子、电子和集成光电子学的应用方面受到了普遍的注意。载流子浓度低于10~(15)cm~(-3)的高纯 InGaAs 因与低载流子浓度有关的较低的器件电容,使其成为PIN 光探测器的特殊需要。与高纯 GaAs 有关的高电子迁移率对微波器件,如 FETs 和
I. INTRODUCTION InGaAs that matches the lattice of InP (In_ (0.53) Ga_ (0.47) As) has received widespread attention in photonic, electronic and optoelectronic applications. High purity InGaAs with carrier concentrations below 10-15 cm -3 is a particular requirement of PIN photodetectors due to the low device capacitance associated with low carrier concentrations. High electron mobility associated with high purity GaAs on microwave devices such as FETs and