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报道了基于蓝宝石衬底的高性能 1mmAlGaN/GaNHEMTs功率器件 .为了提高微波功率器件性能 ,采用新的欧姆接触和新型空气桥方案 .测试表明 ,器件电流密度为 0 784A/mm ,跨导 197mS/mm ,击穿电压大于 4 0V ,截止态漏电较小 ,1mm栅宽器件的单位截止频率达到 2 0GHz,最大振荡频率为 2 8GHz ,功率增益为 11dB ,功率密度为 1 2W/mm ,PAE为 32 % ,两端口阻抗特性显示了在微波应用中的良好潜力
A high performance 1mm AlGaN / GaNHEMTs power device based on sapphire substrate was reported. In order to improve the performance of microwave power devices, a new ohmic contact and a new air bridge scheme were used. The test results show that the device current density is 0 784A / mm and the transconductance is 197mS / mm , The breakdown voltage is greater than 40V, and the cut-off leakage is small. The unit cutoff frequency of 1mm gate-width device reaches 20GHz, the maximum oscillation frequency is 2 8GHz, the power gain is 11dB, the power density is 12W / mm and the PAE is 32% The two-port impedance characteristics show great potential in microwave applications