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介绍了一种用铜作催化剂,辅助单步湿法刻蚀多晶硅片的工艺。该方法具有成本低廉和操作简易的特点。系统研究了反应物浓度和温度对刻蚀速率以及刻蚀后硅片表面形貌的影响,并据此通过调节反应物浓度cHF∶cH2O2=6 mol/L∶2 mol/L,cCu(NO3)2=0.08 mol/L以及反应温度至60℃,得出了最佳的刻蚀参数配比。制备出的多晶硅纳米结构表面,平均反射率在宽波段内降低到5%,陷光减反作用明显。可引用空穴注入模型解释不同反应物浓度下硅片表面形貌的形成机理。通过公式拟合与实验结果的对比,提出了反应活化能以及铜与硅片的接触面积是影响刻蚀过程的内在因素。
A process using copper as a catalyst to assist single-step wet etching of polycrystalline silicon wafers was introduced. The method has the characteristics of low cost and simple operation. The effect of reactant concentration and temperature on the etching rate and surface morphology of etched silicon wafers was systematically investigated. By adjusting the concentration of reactants (cHF: cH2O2 = 6 mol / L: 2 mol / L, cCu (NO3) 2 = 0.08 mol / L and the reaction temperature to 60 ℃, the best etching parameters were obtained. The prepared polycrystalline silicon nano-structure surface, the average reflectance in the wide band reduced to 5%, trapping antireflective effect significantly. The hole injection model can be used to explain the formation mechanism of the surface morphology of the silicon wafer under different reactant concentrations. Through the comparison of the formula fitting and the experimental results, it is proposed that the reaction activation energy and the contact area between the copper and the silicon wafer are the intrinsic factors that affect the etching process.