利用自行设计的实验装置,研究了同步辐射光活化氧对光学元件表面碳污染的清洗作用。清洗前样品的碳层厚度为10.3 nm,同步辐射光被引入实验用真空室内,真空室内干燥氧气的压强维持在1.0 Pa,研究显示同步辐射活化氧能有效地清除硅片表面的石墨型碳层。通过测试清洗前后碳膜的反射率和使用IMD软件对清洗后硅片反射率的拟合,可得碳层的去除率为1.75 nm/h。 Using self-designed experimental apparatus, the effect of synchrotron radiation on the carbon contamination of optical elements was studied. The thickness of the carbon layer before the cleaning was 10.3 nm. Synchrotron radiation was introduced into the experimental vacuum chamber. The pressure of the dry oxygen in the vacuum chamber was maintained at 1.0 Pa. The results show that the synchrotron radiation activated oxygen can effectively remove the graphite carbon layer . The carbon layer removal rate was 1.75 nm / h by testing the reflectivity of the carbon film before and after cleaning and the reflectivity of the wafer after cleaning using IMD software.