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采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻p型ZnO薄膜 .实验使用NO和N2 O共同作为氧源 ,且NO同时作为掺氮源 ,二乙基锌作为锌源 .X射线衍射测试表明薄膜具有c轴择优取向的结构特性 ,二次离子质谱分析证实了氮被掺入了ZnO薄膜 .通过优化锌源流量获得了最高空穴浓度为 1 97× 10 18cm-3 ,最低电阻率为 3 0 2Ω·cm的ZnO薄膜
Nitrogen-doped low-resistance p-type ZnO thin films were grown on glass by metal-organic chemical vapor deposition.NO and N2O were used together as oxygen source and NO as nitrogen source and diethyl zinc as zinc source.X The results of X-ray diffraction (XRD) and X-ray diffraction (XRD) show that the film possesses the preferred c-axis structure and the secondary ion mass spectrometry confirmed the incorporation of nitrogen into the ZnO film. The highest hole concentration of 1 97 × 10 18 cm- ZnO thin film with resistivity of 302Ω · cm