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将制备的3种透明导电氧化物(TCO)薄膜材料,即掺铝氧化锌(Zn O∶Al,AZO)、掺硼氧化锌(Zn O∶B,BZO)和掺氟氧化锡(Sn O∶F,FTO)薄膜进行温度为85℃和相对湿度为85%的湿热实验并进行退火,研究其光学和电学性质衰减特性以及恢复情况。研究表明:湿热实验和经过后续热处理的3种TCO薄膜的表面形貌基本不变;AZO和FTO薄膜光学和电学性能都相对稳定;但BZO薄膜的迁移率则是在湿热实验20 h内由初始的19 cm2/Vs迅速下降到1.99 cm2/Vs,而BZO薄膜载流子浓度是在湿热处理327 h由初始值7.2×1019/cm3迅速下降到8.8×1018/cm3,载流子浓度的降低导致薄膜在800~2200 nm波长范围内的光吸收减少;通过对晶粒间迁移率和晶界处迁移率分析得到BZO薄膜的迁移率衰退主要与水分子侵入薄膜内部并被吸附在晶界处;适当的热处理可使BZO薄膜的电学性能得到恢复。
The prepared three kinds of transparent conductive oxide (TCO) thin film materials, namely aluminum-doped zinc oxide (ZnO: Al, AZO), boron-doped zinc oxide (ZnO: B, BZO) and fluorine-doped tin oxide F, FTO) films were subjected to a wet heat test at a temperature of 85 ° C and a relative humidity of 85%, and annealed to investigate their optical and electrical attenuation properties and their recovery. The results show that the surface morphology of the three TCO films is basically unchanged after wet heat treatment and after heat treatment. The optical and electrical properties of AZO and FTO films are relatively stable. However, the mobility of BZO films is from initial 19 cm2 / Vs rapidly decreased to 1.99 cm2 / Vs, while the carrier concentration of BZO thin film decreased rapidly from 7.2 × 1019 / cm3 to 8.8 × 1018 / cm3 at 327 h in wet heat treatment, and the carrier concentration decreased The light absorption of the film decreases in the wavelength range of 800 ~ 2200 nm. The mobility of the BZO thin film is analyzed by the analysis of the mobility between the grains and the grain boundary. The decay of the mobility of the BZO thin film mainly interferes with the water molecule and is adsorbed at the grain boundary. The proper heat treatment can restore the electrical properties of BZO films.