论文部分内容阅读
基于等效薄层电荷近似模拟表征极化电荷的作用,通过自洽求解Poisson-Schrodinger方程以及求解载流子连续性方程,计算并且讨论了p-AlGaN层掺杂浓度和界面极化电荷对AlGaN/GaN异质结p-i-n紫外探测器能带结构和电场分布以及光电响应的影响.结果表明,极化效应与p-AlGaN层掺杂浓度相互作用对探测器性能有较大影响.其中,在完全极化条件下,p-AlGaN层掺杂浓度越大,p-AlGaN层的耗尽区越窄,i-GaN层越容易被耗尽,器件光电流越小.在一定掺杂浓度条件下,极化效应越强,p-AlGaN层的耗尽区越宽,器件的光电流越大.最后还分析了该结构在不同温度下的探测性能,证明了该结构可以在高温下正常工作.
Based on the equivalent charge of the thin layer, the Poisson-Schrodinger equation and the carrier continuity equation were solved by self-consistent solution to the problem of polarization charges. The effect of p-AlGaN doping concentration and interfacial polarization charge on AlGaN / GaN heterojunction pin ultraviolet detector band structure and the electric field distribution and the photoelectric response.The results show that the polarization effect and p-AlGaN layer doping concentration on the detector performance have a greater impact.Among them, in the complete Under the condition of polarization, the doping concentration of p-AlGaN layer is larger, the narrower the depletion region of p-AlGaN layer, the easier the i-GaN layer is depleted and the smaller the photocurrent of the device is. Under a certain doping concentration, The stronger the polarization effect, the wider the depletion region of the p-AlGaN layer and the larger the photocurrent of the device.Finally, the detection performance of the structure at different temperatures is also analyzed, which proves that the structure can work normally under high temperature.