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This paper describes the implementation of an RF receiver front-end for the 2.4 GHz industrial scientific medical band under TSMC 0.13 μm CMOS technology;it comprises a low noise amplifier(LNA) which uses an added gate-source capacitor for low power performance and a dual-converter composed of a single-balanced active RF mixer and double-balanced passive IF mixer.Dual-down-conversion technique is used for reducing power.A2.4 GHz low power low-IF RF receiver front-end is proposed.An LNA for rejecting image signal,an inductorcapacitor(LC) tank is used in series with source of input-stage transistor of the RF mixer,and combined with the LC load of the LNA,30-dB image rejection is realized.Fabricated in a 0.13 μm CMOS process,the proposed chip occupies 0.42 mm~2 area,achieves 4 dB noise figure,-22 dBm ⅡP3 and 37 dB voltage gain dissipating only4.2-mW under 1.2-V supply.
This paper describes the implementation of an RF receiver front-end for 2.4 GHz industrial scientific medical band under TSMC 0.13 μm CMOS technology; it comprises a low noise amplifier (LNA) which uses an added gate-source capacitor for low power performance and a dual-converter composed of a single-balanced active RF mixer and double-balanced passive IF mixer. Dual-down-conversion technique is used for reducing power. A 2.4 GHz low power low-IF RF receiver front-end is proposed. An LNA for rejecting image signal, an inductor capacitor (LC) tank is used in series with source of input-stage transistor of the RF mixer, and combined with the LC load of the LNA, 30-dB image rejection is realized. Fabrication in a 0.13 μm CMOS process, the proposed chip occupies 0.42 mm ~ 2 area achieves 4 dB noise figure, -22 dBm IIP3 and 37 dB voltage gain dissipated only 4.2-mW under 1.2-V supply.