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半导体材料是从1947年12月开始发展起来的,当时Bardeen和Brattain发明了点接触晶体管,两个月后Shockly发明了p-n结晶体管,这些半导体器件的出现,对半导体材料提出了一定的要求,因而推动了它的发展。例如,制造晶体管需要单晶,Teal和Little就发展了直拉生长单晶的技术;又因需要高纯的单品,促使化学家和物理学家们共同合作,采用化学提纯与物理提纯相结合的技术,使硅多晶中的浅施主杂质和浅受主杂质的含量低达十亿分之几。
Semiconductor materials began to develop in December 1947, when Bardeen and Brattain invented point-contact transistors. Shockly invented pn-junction transistors two months later. The advent of these semiconductor devices places certain demands on semiconductor materials, and as a result, Promote its development. For example, the fabrication of transistors requires single crystals, and Teal and Little have developed Czochralski (Czochralski) growth techniques; and because of the need for high-purity individual products, chemists and physicists are encouraged to work together using chemical and physical purification Technology, making the content of shallow donor impurities and shallow acceptor impurities in silicon polycrystalline as low as a few parts per billion.