论文部分内容阅读
单晶硅中注入高剂量的Ｃ＋ 离子，注入能量为５０ｋｅＶ，经高温退火后形成β－ＳｉＣ沉淀，再经电化学腐蚀形成多孔β－ＳｉＣ，样品表面蒸上一层半透明的金膜，在正向偏压高于２５Ｖ 时，可以获得波长约为４４７ｎｍ 的蓝光发射， 而且该蓝光发射随着电压的升高而增强．文中还将多孔β－ＳｉＣ薄膜的电致发光和其光致发光进行了比较，并讨论了其发光机理
High-dose C + ions were implanted into single-crystal silicon with an energy of 50 keV. After β-SiC precipitation by high temperature annealing, porous β-SiC was formed by electrochemical etching. A semi-transparent gold film was evaporated on the surface of the sample. When the forward bias voltage is higher than 25V, a blue light emission with a wavelength of about 447nm can be obtained, and the blue light emission is enhanced with an increase of the voltage. In this paper, the electroluminescence and photoluminescence of porous β-SiC thin films are also compared, and its luminescence mechanism