nMOS相关论文
通过参数调整和工艺简化 ,制备了应变Si沟道的SiGeNMOS晶体管 .该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道 ,相比于体Si器......
The 13.56 MHz analog front-end circuit for ISO/IEC 15693-compatible radio frequency identification (RFID) trans- ponder ......
Electrostatic discharge (ESD) induced parasitic effects have serious impacts on performance of radio frequency (RF) inte......
提出了一种对BCCD(埋沟电荷耦合器件)沟道电势的直流测试方法,并对此进行了理论分析和实验研究,该方法能快速、准确地进行BCCD沟道......
A rail-to-rail amplifier with constant transconductance,intended for audio processing,is presented.The constant transcon......
对静电放电(ESD)测试所得到的失效样品进行了物理失效分析,采用塑封体背面研磨、光发射显微镜(EMMI)从背面抓取热点的方法进行异常......
A novel high-order curvature compensation negative voltage bandgap reference(NBGR) based on a novel multilevel compensat......
针对40nm体硅工艺利用TCAD(Technology Computer Aided Design)对关键NMOS进行3D建模,采用混合仿真模型对SRAM单粒子效应进行模拟......
<正>目前,正在研究提高单片ROM,EPROM和EROM位数的问题。这里将要报告的是一个晶片尺寸为3英(?)的4MbROM,它使用了标志着单片集成......
In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a ......
