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在氢氟酸溶液中电解腐蚀作为阳极的单晶硅,制备了硅量子线阵.根据其光致发光谱估算了量子线横截面平均边长为2.4—3.1纳米.研究了光致发光带的峰位对单晶硅电阻率,电解液成分,电解电流密度及电解时间等量的依赖关系.
The silicon quantum wire array was prepared by electrolytic etching of monocrystalline silicon as the anode in hydrofluoric acid solution.According to its photoluminescence spectrum, the average side length of quantum wire cross section was 2.4-3.1 nm.The photoluminescence band Peak position on the monocrystalline silicon resistivity, electrolyte composition, electrolytic current density and electrolysis time dependent on the amount of.