论文部分内容阅读
采用光化学工艺,可以选择形成一种特殊原子团或离子而不产生缺陷,即使在低温下也能促使完全反应。讨论了光化学工艺的主要优点,并强调它在晶体生长过程中的重要性。已证明光化学对 GaAs 外延生长层的影响。用一种激发激光照射能增加生长速率。
The use of photochemical technology, you can choose to form a special group of atoms or ions without defects, even at low temperatures can also promote complete reaction. Discusses the main advantages of photochemical processes and emphasizes its importance in crystal growth. The effect of photochemistry on GaAs epitaxial growth has been demonstrated. Irradiation with an exciting laser increases the growth rate.