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以光热电离光谱方法指证了减压充氮气氛下生长的微氮直拉硅单晶中的氮关浅施主NRD（NitrogenRelatedDonor）．确认NRD的形成温区为300～800℃，900℃以上退火将被不可逆消除．指出NRD可能有N－O复合体和氧凝聚态浅施主两种形式，各有不同的热处理行为．
The photo-thermal ionization spectroscopy was used to demonstrate the nitrogen-nitrogen-dependent NRD in micro-nitrogen-cristobalite grown under reduced pressure and nitrogen atmosphere. It is confirmed that the formation temperature of NRD is 300 to 800 ° C and the annealing above 900 ° C will be irreversibly eliminated. It is pointed out that NRD may have two forms of N-O complex and oxygen-condensed state shallow donor, each having different heat-treatment behavior.