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本实验首先测量了N型、(111)面、掺Te2×10~(15)cm~(-3)InSb晶片的机械损伤层,然后用阳极氧化等方法将其做成MOS结构,测量和分析其高频C-V特性,并采用中心偏压加窄摆幅电压的来回慢扫测得无滞回效应的C-V曲线。最后,用Nakagawa式算出界面态密度为2×10~(12)cm~(-2)eV~(-1)。
In this experiment, the mechanical damage layer of N-type, (111) plane and Te2 × 10-15 cm -3 (-3) InSb wafers was first measured, and then MOS structure was made by anodic oxidation and measured and analyzed Its high-frequency CV characteristics, and the central bias plus a narrow swing voltage back and forth slow sweep measured without hysteresis CV curve. Finally, the Nakagawa equation was used to calculate the interface state density of 2 × 10 ~ (12) cm ~ (-2) eV ~ (-1).