本文提出通过栅控二极管在不同偏压下的高频C-V特性曲线,确定埋沟电荷耦合器件(BCCD)随栅压变化的沟道电势.对不同样品进行了高频C-V测量,并求出沟道电势与栅压的变化关系.同时,用直流I-V法进行了测量,结果与高频C-V方法所得到的结果非常接近.根据BCCD一维耗尽近似理论模型,进行了计算机模拟,结果表明,理论与实验结果符合得比较好. In this paper, the channel potential of the buried-channel charge-coupled device (BCCD) with gate voltage is determined by the high-frequency CV characteristic of the gated diode under different bias voltages. The high frequency CV measurements of different samples are carried out and the ditch Channel potential and gate voltage.At the same time, measured by the direct current IV method, the result is very close to that obtained by the high frequency CV method.According to the BCCD one-dimensional depletion approximate theoretical model, The theoretical and experimental results are in good agreement.