以获得高去除速率和低表面粗糙度为目标,建立了基于纳米氧化铈-硅溶胶复配混合磨料新模式。采用小粒径、低分散度的30 nm氧化铈-硅溶胶复配混合作为磨料,利用氧化铈对硅片表面化学反应产物硅酸胺盐的强络合作用,加快了硅衬底表面化学反应进程。分析了复合磨料抛光的机理,通过Aglient 5600LS原子力显微镜,测试了抛光前后的厚度及抛光后的硅片表面微粗糙度。实验结果表明,复合磨料抛光后硅片表面在10μm×10μm范围内粗糙度方均根值0.361 nm,表面微粗糙度降低16%以上,去除率为1 680 nm/min,硅CMP速率提高8%以上,实现了高去除速率、低表面粗糙度的硅单晶抛光。 Aiming at obtaining high removal rate and low surface roughness, a new model based on nano-ceria-silica sol composite mixed abrasive was established. The small particle size, low dispersion of 30 nm ceria - silica sol mixed as an abrasive, the use of cerium oxide on the silicon surface chemical reaction product of strong acid amine silicate complex to speed up the silicon substrate surface chemical reaction process. The mechanism of composite abrasive polishing was analyzed. The Aglient 5600LS atomic force microscope was used to test the thickness before and after polishing and the surface micro-roughness after polishing. The experimental results show that the surface roughness of the silicon wafer after the composite abrasive polishing is 0.361 nm in the range of 10μm × 10μm, the surface micro-roughness is reduced by 16%, the removal rate is 1 680 nm / min, the CMP rate of silicon is increased by 8% Achieve high removal rate, low surface roughness of silicon single crystal polishing.