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垂直双扩散金属-氧化物半导体场效应管(VDMOS)器件的反向耐压能力主要取决于器件结构中的特定pn结反偏击穿电压,由于pn结特性,击穿通常发生在结终端。随着结终端技术的发展,功率VDMOS器件的击穿特性有了很大的提升。主要介绍了几种目前常用的结终端技术的结构及工作原理,包括场限环技术、p+偏移技术、横向变掺杂技术、结终端扩展技术和RESURF技术。重点探讨了每种方法的优缺点,并指出几种结终端技术不同的设计难度、工艺控制和实现要点等。同时固定元胞设计,采用不同的结终端技术试制了600 V VDMOS产品,对比了采用不同结终端技术制作芯片的工艺制造以及成本,可为实际的制造生产提供理论指导。
The reverse breakdown voltage capability of a vertical double diffused metal-oxide semiconductor field-effect transistor (VDMOS) device depends mainly on the specific pn junction reverse bias breakdown voltage in the device structure. Breakdown usually occurs at the junction termination due to the pn junction characteristics. With the development of junction termination technology, the breakdown characteristics of power VDMOS devices have been greatly improved. This paper mainly introduces the structure and working principle of several commonly used junction termination technologies, including field limiting loop technology, p + offset technology, lateral variable doping technology, junction termination expansion technology and RESURF technology. The advantages and disadvantages of each method are discussed in detail, and the design difficulty, process control and implementation essentials of several kinds of terminal technologies are pointed out. At the same time, the cellular design was fixed. The 600 V VDMOS was prototyped using different terminal technologies. Compared with the manufacturing process and the cost of using different terminal technologies, this method can provide theoretical guidance for practical manufacturing.