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报道了反应离子刻蚀转移图形过程中对Amonil光刻胶的刻蚀参数优化的结果.利用软膜紫外光固化纳米压印技术,首先制备了线宽/间距均为200 nm的纳米光栅结构.然后采用反应离子刻蚀的方法去除残留的Amonil光刻胶.研究了不同的气体组成、射频功率、压强和气体流量对刻蚀形貌、表面粗糙度以及刻蚀速度的影响.在优化的工艺条件下,获得了理想的具有垂直侧壁形貌和较小表面粗糙度的纳米光栅阵列.结果表明,选择优化的刻蚀工艺参数,既能有效地改善图形转移的性能,同时也能提高所制备结构的光学应用特性.
The results of the optimization of the etching parameters of Amonil resist during reactive ion etching transfer patterning are reported.Using soft film UV-curable nanoimprint technology, the nanorod structures with line width / spacing of 200 nm were fabricated. Then, the remaining Amonil photoresist was removed by reactive ion etching.The effect of different gas composition, RF power, pressure and gas flow rate on the morphology, surface roughness and etching speed of the etching was studied.In the optimized process , An ideal nano-grating array with vertical sidewall morphology and small surface roughness is obtained.The results show that the optimized etching process parameters can not only effectively improve the performance of the transfer, but also improve the performance of Preparation of the structure of the optical application characteristics.