为满足轨道交通电力牵引应用对高压SiC二极管器件的需求,对4H-SiC器件有源区采用了不同JBS栅条参数设计,并通过TCAD仿真对比分析了栅条参数对器件性能的影响;器件终端结构采用经过优化的35个场限环结构设计;最后采用Ti作为肖特基金属,制备获得的3 300 V/15 A 4H-SiC JBS器件势垒高度约为1.19 e V、击穿电压高于3 300 V。这是国内首次报道的3 300 V/15 A规格SiC JBS器件产品。通过实验测得:器件的特征导通电阻为7.6~19 mΩ·cm~2;室温下,反向偏压达到3 300 V时,器件的漏电流仅为0.3μA,雪崩击穿电压达到3 800 V。 In order to meet the demand of high-voltage SiC diode devices for traction applications of rail transit, different JBS grid parameters were designed for the active region of 4H-SiC devices. The influence of grid parameters on the device performance was analyzed by TCAD simulation. The structure was optimized by 35 field-limiting ring structures. Finally, Ti was used as the Schottky metal. The barrier height of the 3 300 V / 15 A 4H-SiC JBS device prepared was about 1.19 e V and the breakdown voltage was higher than 3 300 V. This is the first report of a 3 300 V / 15 A SiC SiCb device in China. The experimental results show that the on-resistance of the device is 7.6 ~ 19 mΩ · cm ~ 2. When the reverse bias voltage reaches 3 300 V at room temperature, the leakage current of the device is only 0.3 μA and the avalanche breakdown voltage reaches 3 800 V.