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德意志联邦邮电总局的研究所(达姆施塔特电信技术中心)研制出适合做光通信中发射机的半导体激光器,这种激光器的材料是 InGaAsP/InP,并具有蘑菇状的横截面,发射波长为1.3μm或1.55μm,其结构大大简单于具有相似性能的“隐埋异质结构”或“BH”激光器。用这种新的结构,西德首先制出室温下阈值电流15mA 的激光器。效率大于30％/端面,即使当激光器的衬底向下装在热沉上时,发射的光功率还超过30mW/端面。蘑菇状激光器能在大于1Gbit/s 的 RZ 信号下进行调制。
The Federal Institute of Posts and Telecommunications (Darmstadt Telecom Technology Center) has developed a semiconductor laser suitable for use as a transmitter in optical communication. The material of this laser is InGaAsP / InP and has a mushroom-like cross-section with an emission wavelength Is 1.3 μm or 1.55 μm and its structure is much simpler than “buried heterostructure” or “BH” lasers with similar properties. With this new structure, West Germany first made a room temperature threshold current 15mA laser. The efficiency is greater than 30% per facet and the emitted light power exceeds 30 mW / facet even when the laser substrate is mounted down on the heatsink. Mushroom lasers can be modulated at RZ signals greater than 1 Gbit / s.