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分析了FET器件的噪声特性,导出在噪声最低条件下器件对信源导纳的要求,得出最佳信源导纳。讨论了最佳信源导纳的实验测量方法。以此为基础提出微波低噪声FET放大器的设计方法。
The noise characteristics of FET devices are analyzed, and the requirements of the device for the admittance of the source under the lowest noise are deduced. The best admittance of the source is obtained. The experimental measurement of the best source admittance is discussed. Based on this, a design method of microwave low noise FET amplifier is proposed.