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In this paper, TiN/AlO_x gated Al Ga N/Ga N metal–oxide–semiconductor heterostructure field-effect transistors(MOSHFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600℃ with the contact resistance approximately 1.6 ?·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlO_x gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate Al Ga N/Ga N MOS-HFETs.
In this paper, TiN / AlO_x gated Al Ga N / Ga N metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 · · mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN / AlO_x gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN / GaN MOS-HFETs.