Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition(CVD) system using H2-SiH4-C2H4-HCl.The effect of the SiH_4/H_2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively.The growth rate increase in proportion to the SiH_4/H_2 ratio and the influence mechanism of chlorine has been investigated.With the reactor pressure increasing from 40 to 100 Torr,the growth rate increased to 52μm/h and then decreased to 47 μm/h,which is due to the joint effect of H_2 and HC1 etching as well as the formation of Si clusters at higher reactor pressure.The surface root mean square(RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h.The scanning electron microscope(SEM),Raman spectroscopy and X-ray diffraction(XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved.These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4 ° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4- of the SiH 4 / H 2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH 4 / H 2 ratio and the influence mechanism of chlorine has been investigated. from 40 to 100 Torr, the growth rate increased to 52 μm / h and then decreased to 47 μm / h, which is due to the joint effect of H_2 and HC1 etching as well as the formation of Si clusters at higher reactor pressure. root mean square (RMS) traces keeps around 1 nm with the growth rate increasing to 49 μm / h. scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal qual ity can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy.