According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer h......

Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling mi......

We give a brief introduction to the oxide (ZnO, TiO2 , In2O3 , SnO2 , etc.)-based magnetic semiconductors from fundament......

0.25 m Ga N HEMT with Al Ga N back barrier for high power switch application has been presented. By introducing Al Ga N ......

Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-m......

A promising technology named epitaxy on nano-scale freestanding fin(ENFF) is firstly proposed for heteroepitaxy This tec......

Interfacial barrier is a key factor that determines the performances of heterojunctions.In this work,we study the effect......

We report the growth of InSb layers directly on GaAs(001) substrates without any buffer layers by molecular beam epitaxy......