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采用PLD（PulsedLaserDeposition）工艺制备Au／Pb（Zr，Ti）O3／SiO2／Si异质结构．这种结构的铁电场效应晶体管（FFET）的电性能由I－V和C－V特性表征．Au／Pb（Zr，Ti）O3／SiO2／Si异质结构的C－V曲线表现为极化开关，对应500nmPZT，记忆窗口约3V．实验表明Au／PZT／SiO2／Si栅结构实现了铁电体场效应存储性能．
Au / Pb (Zr, Ti) O3 / SiO2 / Si heterostructures were prepared by PLD (Pulsed Laser Deposition). The electrical properties of a ferroelectric field effect transistor (FFET) of this structure are characterized by I-V and C-V characteristics. The C-V curve of Au / Pb (Zr, Ti) O3 / SiO2 / Si heterostructures behaves as a polarization switch corresponding to 500 nm PZT with a memory window of about 3V. Experiments show that the Au / PZT / SiO2 / Si gate structure realizes the ferroelectric field-effect storage performance.