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IGBT模块作为重要的高频大功率开关元器件,频繁的热循环导致其层状模块结构钎焊焊层内产生热应力,使得焊层开裂脱落,进而引起IGBT模块芯片温度过高失效。颗粒增强相金属基复合材料(SiCP/Al)基板由于其较高的热导率和与IGBT封装材料相匹配的热膨胀系数,能解决IGBT模块这一主要失效难题。采用预制块压力渗透法制备铝基碳化硅基板:将SiC颗粒进行表面金属化预处理,熔融铝液在700℃下保温30 min,预热模具温度设定600℃。压力渗透后脱模成型的铝基碳化硅基板,其热导率与热膨胀系数测试值均符合基板材料的性能要求。
IGBT module as an important high-frequency high-power switching components, frequent thermal cycling lead to the thermal stress in the brazed solder layer of the layered module structure, causing the solder layer to crack and fall off, thereby causing the IGBT module chip to overheat. Particulate Reinforced-Phase Metal-Matrix Composite (SiCP / Al) Substrates Solve the main failure issue of IGBT modules due to their high thermal conductivity and thermal coefficient of expansion matched to IGBT packaging materials. Preparation of aluminum-based silicon carbide substrate by preformed pressure infiltration method: SiC particles were pretreated by surface metallization, the molten aluminum was incubated at 700 ℃ for 30 min, and the preheated mold temperature was set at 600 ℃. The pressure-permeable mold release aluminum-based silicon carbide substrate, the thermal conductivity and thermal expansion coefficient of the test values are in line with the performance requirements of the substrate material.