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本实验采用ＴＨＺ波形测量的方法获得了镀金的砷化曾晶体，金属半导体界面两侧费米面的弛豫平衡的时间常数是１２ｕｓ．实验中ＴＨｚ电磁波的发生机制是。飞秒脉冲激光辐照半导体表面产生的瞬间载流子在半导体表面电场中加速，从而产生电磁辐射．该辐射具有皮秒的脉宽，频率在?
In this experiment, the gold-plated arsenide crystals were obtained by THZ waveform measurement. The time constant of the relaxation equilibrium of the Fermi surface on both sides of the metal-semiconductor interface was 12 μs. The mechanism of THz electromagnetic wave in experiment is. The instantaneous carriers generated by the femtosecond pulsed laser irradiation of the semiconductor surface are accelerated in the electric field of the semiconductor surface to generate electromagnetic radiation. The radiation has a picosecond pulse width, frequency?