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我们对用GSMBE技术生长的In0.63Ga0.37AS／lnP压应变单量子阱样品进行了变温光致发光研究，In0.63Ga0.37As阱宽为1nm到11nm，温度变化范围为10K到300K．发现不同阱宽的压应变量子阱中激子跃迁能量随温度的变化关系与体In0.53Ga0.47As材料相似，温度系数与阱宽无关．对1nm的阱，我们观察到其光致发光谱峰为双峰，经分析表明，双峰结构由量子阱界面起伏一个分子单层所致．说明量子阱界面极为平整，样品具有较高的质量．考虑到组分效应、量子尺寸效应及应变效应，计算了In0.63G0.37As／InP压应变量子阱中的激子跃迁能量，理论计算结果与实验结果符合得很好．
We performed a temperature-dependent photoluminescence study on In0.63Ga0.37AS / lnP single-quantum well strain grown by the GSMBE technique. The In0.63Ga0.37As well has a well width of 1nm to 11nm and a temperature range of 10K to 300K. It is found that the energy transitions of excitons in different quantum wells with different well widths are similar to those of bulk In0.53Ga0.47As, and the temperature coefficient has nothing to do with the well width. For the 1 nm well, we observed that its photoluminescence peak is bimodal. The analysis shows that the bimodal structure is caused by a single molecular layer undulating by the quantum well interface. Description quantum well interface is very flat, the sample has a higher quality. Taking into account the composition effect, quantum size effect and strain effect, the exciton transition energy in the In0.63G0.37As / InP piezostrain quantum well is calculated. The theoretical calculation results are in good agreement with the experimental results.