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采用区熔工艺对多次真空提纯后的多晶硅进行了n型高阻硅单晶生长。真空提纯时,通过对工艺参数的精确控制,稳步提升了晶体的纯度和电阻率。单晶生长时,对比分析了常规旋转工艺和正反转旋转工艺两种生长方式对单晶径向电阻率分布的影响,并通过计算得到了杂质在单晶径向上的分布规律。分析认为正反转旋转工艺可以精确地控制杂质在单晶径向上的分布情况,进而确保了单晶径向上的磷杂质含量略大于硼杂质含量。最终,通过采用正反转旋转工艺,成功研制了电阻率为8 000Ω·cm以上的n型高均匀性区熔硅单晶。
The n-type high-resistance silicon single crystal growth was carried out on the polycrystalline silicon which was vacuum-purified by zone melting process. Vacuum purification, through the precise control of process parameters, and steadily improve the crystal purity and resistivity. In single crystal growth, the influence of the two growth modes, the conventional rotation process and the forward-reverse rotation process, on the single-crystal radial resistivity distribution was comparatively analyzed. The distribution of impurities in the radial direction of the single crystal was calculated. The analysis shows that the forward-reverse rotation process can precisely control the distribution of impurities in the radial direction of the single crystal, thereby ensuring that the content of phosphorus impurity in the radial direction of the single crystal is slightly larger than that of the boron impurity. Finally, an n-type high-uniformity region-melting silicon single crystal with a resistivity of 8 000 Ω · cm or more was successfully developed by using a forward-reverse rotation process.