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利用金属有机化学气相沉积(MOCVD)技术,在不同偏向角的GaAs衬底上生长了InGaAs/GaAs单量子阱外延结构。通过对样品室温光致发光(PL)谱测试结果的分析,讨论了衬底偏向角、量子阱层生长温度以及V/III比对外延片发光波长、发光强度及PL谱半峰全宽(FWHM)的影响。发现在相同生长条件下,对于InGaAs/GaAs应变量子阱结构,在GaAs(100)偏<111>A晶向较小偏向角的衬底上生长的样品PL谱发光强度较大,半峰全宽较窄;量子阱层低温生长的样品发光强度更强;增大量子阱层V/III比可以提高样品的发光强度,同时PL谱峰值波长出现红移。
InGaAs / GaAs single quantum well epitaxial structure was grown on GaAs substrate with different deflection angles by metal organic chemical vapor deposition (MOCVD) technique. Based on the analysis of PL spectra at room temperature, the effects of substrate deflection angle, growth temperature of quantum well layer and V / III ratio on the luminescence wavelength, luminescence intensity and FWHM )Impact. It is found that for the InGaAs / GaAs strained quantum well structure, PL spectra of GaAs (100) <111> A crystals grown on the substrate with smaller deflection angles are larger under the same growth conditions. The emission intensity of the quantum well layer grown at low temperature is stronger; increasing the V / III ratio of the quantum well layer can improve the luminescence intensity of the sample and the red shift of the peak wavelength of the PL spectrum.